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BSO307N - SIPMOS Small-Signal-Transistor

Features

  • Dual N channel.
  • BSO 307N Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 30 0.05 5 V Ω A Enhancement mode.
  • Avalanche rated.
  • Logic Level.
  • dv/dt rated Type BSO 307 N Parameter Continuous drain current, one channel active Package SO 8 Symbol Ordering Code Q67000-S4012 Value 5 20 55 5 0.2 6 mJ A mJ kV/µs Unit A Maximum Ratings, at T j = 25 ˚C, unless otherwise specified ID IDpulse.

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Datasheet Details

Part number BSO307N
Manufacturer Infineon Technologies AG
File Size 377.92 KB
Description SIPMOS Small-Signal-Transistor
Datasheet download datasheet BSO307N Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data SIPMOS  Small-Signal-Transistor Features • Dual N channel • BSO 307N Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 30 0.05 5 V Ω A Enhancement mode • Avalanche rated • Logic Level • dv/dt rated Type BSO 307 N Parameter Continuous drain current, one channel active Package SO 8 Symbol Ordering Code Q67000-S4012 Value 5 20 55 5 0.
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