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Low Noise Silicon Bipolar RF Transistor
• For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
• Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
BFR92P
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR92P
Marking
Pin Configuration
GFs 1=B 2=E 3=C
Package SOT23
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 93 °C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
15 20 20 2.5 45 4 280
150 -55 ...