Datasheet4U Logo Datasheet4U.com

BFR193W - Low Noise Silicon Bipolar RF Transistor

📥 Download Datasheet

Datasheet Details

Part number BFR193W
Manufacturer Infineon Technologies AG
File Size 647.52 KB
Description Low Noise Silicon Bipolar RF Transistor
Datasheet download datasheet BFR193W Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BFR193W NPN Silicon RF Transistor Siemens Semiconductor Group
BFR193 NPN Silicon RF Transistor Siemens Semiconductor Group
BFR193F Low Noise Silicon Bipolar RF Transistor Infineon
BFR193L3 NPN Bipolar RF Transistor Infineon
BFR193T Silicon NPN Planar RF Transistor Vishay Telefunken

Other Datasheets by Infineon Technologies AG

Part Number Description
BFR193 Low Noise Silicon Bipolar RF Transistor
BFR193T NPN Silicon RF Transistor
BFR106 Low Noise Silicon Bipolar RF Transistor
BFR180 NPN Silicon RF Transistor
BFR180W NPN Silicon RF Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR193W 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR193W Marking Pin Configuration RCs 1=B 2=E 3=C Package SOT323 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 63°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Value 12 20 20 2 80 10 580 150 -55 ...
Published: |