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PMD16K60 - Silicon Power Transistor

Description

¡¤ With TO-3 package ¡¤ High DC current gain ¡¤ DARLINGTON APPLICATIONS ¡¤ Designed for use in power switching application.

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Part Number Description Manufacturer
PMD16K60 SILICON POWER DARLINGTON TRANSISTORS Central Semiconductor Corp
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PMD1601K Silicon NPN Darlingtion Power Transistor Inchange Semiconductor

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Inchange Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ¡¤ With TO-3 package ¡¤ High DC current gain ¡¤ DARLINGTON APPLICATIONS ¡¤ Designed for use in power switching application. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION PMD16K60/80/100 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25¡æ ) SYMBOL PARAMETER PMD16K60 VCBO Collector-base voltage PMD16K80 PMD16K100 PMD16K60 VCEO Collector-emitter voltage PMD16K80 PMD16K100 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current(peak) Base current Power dissipation Max. operating Junction temperature Storage temperature TC=25¡æ Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 20 40 0.
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