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isc Silicon NPN RF Transistor
DESCRIPTION ·Low Noise Figure
NF = 4.5 dB TYP. @VCE = 5 V, IC = 2 mA, f = 500 MHz ·High Current-Gain—Bandwidth Product
fT= 1 GHz TYP. @VCE = 5 V, IC = 2 mA, f = 500 MHz ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For a wide range of RF applications such as: mixers and
oscillators in TV tuners and RF communications equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
25
V
VCEO Collector-Emitter Voltage
15
V
VEBO Emitter-Base Voltage
2.5
V
IC
Collector Current-Continuous
25
mA
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
50
mA
0.
BFS67 Datasheet
