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2SC5387 - Silicon NPN Power Transistor

General Description

High Breakdown Voltage- : VCBO= 1200V (Min) High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display, color

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5387 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display, color TV. ·High speed switching applications.