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RSJ250P10 - P-Channel MOSFET Transistor

Features

  • Drain Current.
  • ID= -25A@ TC=25℃.
  • Drain Source Voltage : VDSS= -100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) @VGS=10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc P-Channel MOSFET Transistor RSJ250P10 ·FEATURES ·Drain Current –ID= -25A@ TC=25℃ ·Drain Source Voltage : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -25 A IDM Drain Current-Single Pulsed -50 A PD Total Dissipation @TC=25℃ 50 W Tj Max.
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