Full PDF Text Transcription for NTD18N06L (Reference)
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NTD18N06L. For precise diagrams, and layout, please refer to the original PDF.
isc N-Channel MOSFET Transistor NTD18N06L FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = ...
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ltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pluse 54 A PD Total Dissipation @TC=25℃ 55 W TJ Max.
NTD18N06L Datasheet
