MBRB1045
FEATURES
- Schottky barrier chip
- Low Power Loss/High Efficiency
- High Operating Junction Temperature
- Low Forward Voltage
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- For use in high frequency rectifier of switching mode
Power supplies, freewheeling diodes, DC-to-DC converters Or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
IF(AV)
Average Rectified Forward Current
IFSM
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions
A halfwave ,,single phase,60Hz)
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~175 ℃ isc website：.isc. isc &1 iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX...
