MBRB1035
FEATURES
- Schottky Barrier Chip
- Guard Ring Die Construction for Transient Protection
- Low Power Loss/High Efficiency
- High Surge Capability
- High Current Capability，Low Forward Voltage Drop
- Plastic Material：UL Flammability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
IF(AV)
IFSM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 125℃
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 60Hz)
Junction Temperature
Tstg
Storage Temperature Range dv/dt
Voltage Rate of Change (Rated VR)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
VALUE UNIT
℃
-40~150
℃
V/...
