Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
Good Linearity of hFE
Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25℃
Complement to Type KSB596
APPLICATIONS
Designed for power amplifier applications.
Recommended for 20~25W high fidelity audio frequency
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Full PDF Text Transcription for KSD526 (Reference)
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KSD526. For precise diagrams, and layout, please refer to the original PDF.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ ·Complement to Type KSB596 APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 20~25W high fidelity audio frequency amplifier output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 80 80 5 4 0.4 30 1
KSD526 Datasheet
