High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
High Reliability
APPLICATIONS
Electronic ballast applicaition
High voltage switching applicaition
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Full PDF Text Transcription for KSD5075T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
KSD5075T. For precise diagrams, and layout, please refer to the original PDF.
ON ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Electronic ballast applicaition ·High voltage switching applicaition ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage IC Collector Current- Continuous 6V 3.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature 10 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
KSD5075T Datasheet
