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K1142 - 2SK1142

General Description

Drain Current ID=2A@ TC=25℃ Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 80

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1142 DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min)...

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·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 800 ±20 V V Drain Current-continuous@ TC=25℃ 2 A Total Dissipation@TC=25℃ 35 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 0.83 35 ℃/W ℃/W isc website：www.iscsemi.

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