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ISH6N70 - N-Channel Mosfet Transistor

Features

  • Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max).
  • Low gate charge.
  • High switching speed.
  • Low input capacitance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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ISH3N150 N-Channel MOSFET Transistor

Full PDF Text Transcription

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification ISH6N70 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) ·Low gate charge ·High switching speed ·Low input capacitance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·The ISH6N70 is universally applied in high efficiency switch mode power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6A IDM Drain Current-Single Plused 24 A PD Total Dissipation @TC=25℃ 55 W Tj Max.
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