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ISCNH060D - N-Channel MOSFET Transistor

Datasheet Summary

Description

and solenoid drive.

Max.

Features

  • Drain Current : ID= 100A@ TC=25℃.
  • Drain Source Voltage : VDSS= 100V(Min).
  • Static Drain-Source On-Resistance : RDS(on).

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Datasheet Details

Part number ISCNH060D
Manufacturer Inchange Semiconductor
File Size 263.16 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet ISCNH060D Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) <6mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 100 A PD Total Dissipation @TC=25℃ 90 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.
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