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IRF646 - N-Channel Mosfet Transistor

Key Features

  • 14A, 275V.
  • RDS(ON) = 0.280Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • High Input Impedance.
  • 275V DC Rating-120V AC Line System Operation.

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF646 ·FEATURES ·14A, 275V ·RDS(ON) = 0.280Ω ·Single Pulse Avalanche Energy Rated ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·High Input Impedance ·275V DC Rating-120V AC Line System Operation ·DESCRITION ·designed for applications such as switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.