IRF612
FEATURES
- Low RDS(on)
- VGS Rated at ±20V
- Silicon Gate for Fast Switching Speed
- Rugged
- Low Drive Requirements isc Product Specification
- DESCRITION
- Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse.
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
200 ±20
ID Drain Current-Continuous
2.6 A
IDM Drain Current-Single Plused
6.5 A
PD Total Dissipation @TC=25℃
43 W
Tj Max. Operating Junction Temperature -55~175 ℃
Tstg Storage Temperature
-55~175 ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.9 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website：.iscsemi.cn
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