Datasheet4U Logo Datasheet4U.com

IRF341 - N-Channel MOSFET Transistor

General Description

Silicon Gate for Fast Switching Speed Rugged APPLICATIONS High voltage High speed application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 350 ±20 V V Drain Current-continuous@ TC=25℃

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF341 N-Channel Power MOSFET Fairchild Semiconductor
IRF341 N-Channel Power MOSFET Samsung semiconductor
IRF341 N-Channel Power MOSFETs ART CHIP
IRF3415 Power MOSFET International Rectifier
IRF3415 N-Channel MOSFET INCHANGE

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF340 N-Channel MOSFET Transistor
IRF342 N-Channel MOSFET Transistor
IRF343 N-Channel MOSFET Transistor
IRF305 N-Channel MOSFET Transistor
IRF320 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF341 DESCRIPTION ·Silicon Gate for Fast Switching Speed ·Rugged APPLICATIONS ·High voltage ·High speed application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 350 ±20 V V Drain Current-continuous@ TC=25℃ 8 A Total Dissipation@TC=25℃ 150 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.83 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.