Datasheet4U Logo Datasheet4U.com

IRF250 - N-Channel MOSFET Transistor

Description

Drain Current ID=30A@ TC=25℃ Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) Nanosecond Switching Speed APPLICATIONS Switching power supplies Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATIN

📥 Download Datasheet

📁 Similar Datasheet

  • IRF250 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF250 - N-Channel Power MOSFET (Seme LAB)
  • IRF250 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF250 - HEXFET TRANSISTORS (International Rectifier)
  • IRF250P224 - N-Channel MOSFET (INCHANGE)
  • IRF250P224 - MOSFET (Infineon)
  • IRF250P225 - MOSFET (Infineon)
  • IRF250P225 - N-Channel MOSFET (INCHANGE)
  • IRF250SMD - N-Channel Power MOSFET (Seme LAB)
  • IRF251 - N-Channel Power MOSFET (Samsung semiconductor)
Other Datasheets by Inchange Semiconductor
  • IRF251 - N-Channel MOSFET Transistor
  • IRF252 - N-Channel MOSFET Transistor
  • IRF253 - N-Channel MOSFET Transistor
  • IRF254 - N-Channel MOSFET Transistor
  • IRF255 - N-Channel MOSFET Transistor
  • IRF256 - N-Channel MOSFET Transistor
  • IRF257 - N-Channel MOSFET Transistor
  • IRF220 - N-Channel MOSFET Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF250 DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·Nanosecond Switching Speed APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 200 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 30 A Total Dissipation@TC=25℃ 150 W Max.
Published: |