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IRF236 - N-Channel MOSFET Transistor

Description

Drain Current ID=8.1A@ TC=25℃ Drain Source Voltage- : VDSS= 275V(Min) Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) Nanosecond Switching speeds APPLICATIONS Switching power supplies Switching converters,motor driver,relay driver Drivers for high-power bi

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF236 DESCRIPTION ·Drain Current ID=8.1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) ·Nanosecond Switching speeds APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Drivers for high-power bipolar switching transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 275 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 8.1 A Total Dissipation@TC=25℃ 75 W Max.
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