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HG2N60 - N-Channel Mosfet Transistor

Features

  • Drain Current.
  • ID= 2A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max).
  • Avalanche Energy Specified.
  • Fast Switching.
  • Simple Drive Requirements.

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·High efficiency switch mode power supply. Charger UPS power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Plused PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature isc Product Specification HG2N60 VALUE 600 ±30 2 6 50 150 -55~150 UNIT V V A A W ℃ ℃ isc website： www.iscsemi.
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