D1816
DESCRIPTION
- Excellent linearity of h FE
- Small and slim package facilitating pactness of sets
- Low collector-to-emitter saturation voltage
- Fast switching speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Relay drivers,High speed inverters,converters and other general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous 4 A
ICP Collector Current-Pulse
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
8A
20 W
1.0 W
150 ℃
-55~150
℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE...
