D1576
DESCRIPTION
- High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.)
- High Switching Speed
- Wide Area of Safe Operation
APPLICATIONS
- Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCES
Collector- Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current- Continuous w ww s c s .i
1500 V 1500 V 700 V 6 V 2 A 6 A 2.5 A n c . i m e
Collector Current-Peak
Base Current-Peak Collector Power Dissipation @ Ta=25℃
2.5 W
PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 80
℃
Tstg
Storage Temperature Range
-55~150
℃ isc Website：.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1576
TYP.
UNIT
VCE(sat)...
