D1517
DESCRIPTION
- Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A
- Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min)
- Good Linearity of h FE
- High Speed Switching
APPLICATIONS
- Designed for power amplifier,power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage w w s c s i . w
VALUE UNIT 130 V 80 V 7 V 2 A 5 A 25 W n c . i m e
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2
℃
Tstg
Storage Temperature Range
-55~150
℃ isc Website：.iscsemi.cn
..
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO h FE-1 h FE-2 f T PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation...
