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BYW51-200 - Ultrafast Rectifier

Features

  • High surge capacity.
  • Low Forward Voltage.
  • Low Leakage Current.
  • 150℃ Operating Junction Temperature.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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Ultrafast Rectifier INCHANGE Semiconductor BYW51-200 FEATURES ·High surge capacity ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Dual center tap rectifier suited for switched mode power supplies and high frequency DC to DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Per Diode Per device 200 10 20 V A IF(RMS) RMS forward current Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions halfwave, single phase, 60Hz) TJ Junction Temperature 20 A
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