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BUW58 - Silicon NPN Power Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 160V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 15A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high power appli

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 160V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 15A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications.
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