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BUK453-100B - N-Channel MOSFET Transistor

Download the BUK453-100B datasheet PDF. This datasheet also covers the BUK453-100A variant, as both devices belong to the same n-channel mosfet transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Drain Source Voltage- : VDSS=100V(Min) Low RDS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching

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Note: The manufacturer provides a single datasheet file (BUK453-100A-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BUK453-100B PowerMOS transistor NXP
BUK453-100A PowerMOS transistor NXP
BUK453-60A PowerMOS transistor NXP
BUK453-60B PowerMOS transistor NXP
BUK451-100A PowerMOS transistor NXP

Other Datasheets by Inchange Semiconductor

Part Number Description
BUK453-100A N-Channel MOSFET Transistor
BUK453-60A N-Channel MOSFET Transistor
BUK453-60B N-Channel MOSFET Transistor
BUK452-100A N-Channel MOSFET Transistor
BUK452-100B N-Channel MOSFET Transistor

Full PDF Text Transcription

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage Drain BUK453-100A ID Current-continuou s@ TC=25℃ BUK453-100B Ptot Total Dissipation@TC=25℃ ±30 V 14 A 13 75 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER 175 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.
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