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BU807 - Silicon NPN Power Transistor

Description

High Voltage: VCBO= 330V(Min) Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

and CRT’s.

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BU807 isc website：www.iscsemi.
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