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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1217
DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818
APPLICATIONS ·Designed for use in DC-DC converter, driver, solenid and
motor .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous -3 A
ICP Collector Current-Pulse
-5 A
IBB Base Current-Continuous
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-0.5 10 1.
B1217 Datasheet
