7N60A
DESCRIPTION
- Drain Current ID= 7A@ TC=25℃
- Drain Source Voltage-
: VDSS= 600V(Min)
- Fast Switching Speed
- APPLICATIONS
- General purpose power amplifier
- ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
600 ±20
ID(puls)
Pulse Drain Current
28 A
Ptot Total Dissipation@TC=25℃
60 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.25 ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor
- ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold...
