4N70 - N-Channel MOSFET Transistor

Datasheet Summary

Features

Low RDS(on) = 2.5Ω(MAX).
Improved Gate Charge.
Fast Switching Speed.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

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Datasheet Details

Part number	4N70
Manufacturer	Inchange Semiconductor
File Size	231.74 KB
Description	N-Channel MOSFET Transistor
Datasheet	4N70 Datasheet
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isc N-Channel Mosfet Transistor 4N70 ·FEATURES ·Low RDS(on) = 2.5Ω(MAX) ·Improved Gate Charge ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching mode power supplies ·DC-DC & DC-AC converter ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 700 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 4 A IDM Drain Current-Single Plused 16 A Ptot Total Dissipation@TC=25℃ 36 W Tj Max.

Published: Jul 11, 2016 |