3DD15C - Silicon NPN Power Transistor

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Inchange Semiconductor

Datasheet Details

Part number	3DD15C
Manufacturer	Inchange Semiconductor
File Size	184.61 KB
Description	Silicon NPN Power Transistor
Datasheet	3DD15C Datasheet
Additional preview pages of the 3DD15C datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) DC Current Gain- : hFE= 30~250(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A APPLICATIONS Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5V IC Collector Current

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Published: Jun 18, 2016 |