Datasheet4U Logo Datasheet4U.com

2SK995 - N-Channel MOSFET Transistor

Description

Drain Current ID=5A@ TC=25℃ Drain Source Voltage- : VDSS=550V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE NIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=

📥 Download Datasheet

📁 Similar Datasheet

  • 2SK996 - Silicon N-Channel MOSFET (Panasonic)
  • 2SK900 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK901 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK902 - N-Channel Silicon Power MOS-FET (Fuji Electric)
  • 2SK903 - MOSFET Transistor (Fuji)
  • 2SK903-M - Power MOSFET Transistor (Fuji)
  • 2SK903-MR - POWER MOSFET (Fuji)
  • 2SK905 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK906 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK930 - N-Channel JFET (ETC)
Other Datasheets by Inchange Semiconductor
  • 2SK996 - N-Channel MOSFET Transistor
  • 2SK900 - N-Channel MOSFET Transistor
  • 2SK901 - N-Channel MOSFET Transistor
  • 2SK902 - N-Channel MOSFET Transistor
  • 2SK903 - N-Channel MOSFET Transistor
  • 2SK903-MR - N-Channel MOSFET Transistor
  • 2SK904 - N-Channel MOSFET Transistor
  • 2SK905 - N-Channel MOSFET Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK995 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=550V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE NIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 550 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 5 A Total Dissipation@TC=25℃ 60 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 1.0 Thermal Resistance,Junction to Ambient 62.5 ℃/W ℃/W isc website：www.iscsemi.
Published: |