Datasheet4U Logo Datasheet4U.com

2SK849 - N-Channel MOSFET Transistor

Description

Drain Current ID=40A@ TC=25℃ Drain Source Voltage- : VDSS=60V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage,high speed applications, such as off-line switching power supplies , UP

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK800 N-Channel MOSFET NEC
2SK801 MOSFET NEC
2SK802 N-Channel MOSFET NEC
2SK805 Silicon N-Channel Power F-MOS FET Matsushita Electric
2SK806 Silicon N-channel Power F-MOS FET Panasonic

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK843 N-Channel MOSFET Transistor
2SK844 N-Channel MOSFET Transistor
2SK845 N-Channel MOSFET Transistor
2SK846 N-Channel MOSFET Transistor
2SK803 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for low voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 40 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
Published: |