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2SK745 - N-Channel MOSFET Transistor

Description

purpose applications.

Features

  • Drain Current.
  • ID=20A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 50V(Min).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 50 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A PD Total Dissipation @TC=25℃ 100 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SK745 isc website：www.iscsemi.
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