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2SK636 - N-Channel MOSFET Transistor

Description

applications such as switching regulators, converters, solenoid and relay drivers.

Features

  • Drain Current.
  • ID=8A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 500V(Min).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor 2SK636 FEATURES ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max.
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