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2SD2583 - Silicon NPN Power Transistor

General Description

High Collector Current-IC= 5A Low Saturation Voltage - : VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA High DC Current Gain- : hFE= 150~600@ IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 5A ·Low Saturation Voltage - : VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain- : hFE= 150~600@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5.0 A ICP Collector Current-Pulse 10 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.0 A 1.