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2SD1720 - Power Transistor

General Description

High Collector Current:: IC= 5A Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@IC= 3A Wide Area of Safe Operation Complement to Type 2SB1291 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequen

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isc Silicon NPN Power Transistor 2SD1720 DESCRIPTION ·High Collector Current:: IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1291 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.