2SC5352
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
- High Switching Speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching regulator and high voltage switching applications.
- High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃ isc website：.iscsemi....
