Datasheet4U Logo Datasheet4U.com

2SC5352 - Silicon NPN Power Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

High speed DC-DC converter appli

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC5352 NPN TRANSISTOR Toshiba Semiconductor
2SC535 NPN TRANSISTOR Hitachi Semiconductor
2SC535 Silicon NPN Transistor Renesas
2SC5351 NPN TRANSISTOR Toshiba Semiconductor
2SC5353 NPN TRANSISTOR Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC5353 Silicon NPN Transistor
2SC5354 Silicon NPN Power Transistor
2SC5386 Silicon NPN Power Transistors
2SC5027 Silicon NPN Transistor
2SC5047 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.