Datasheet4U Logo Datasheet4U.com

2SC2810 - Silicon NPN Power Transistors

Description

Low Collector Saturation Voltage Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2810 SILICON POWER TRANSISTOR SavantIC
2SC2812 Silicon Epitaxial Planar Transistor GME
2SC2812 Silicon NPN transistor BLUE ROCKET ELECTRONICS
2SC2812 PNP / NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SC2812N PNP / NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC2233 Silicon NPN Power Transistor
2SC2242 Silicon NPN Power Transistor
2SC2247 Power Transistor
2SC2248 Power Transistor
2SC2293 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2810 DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
Published: |