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2SC2625 - Silicon NPN Power Transistors

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Part number 2SC2625
Manufacturer Inchange Semiconductor
File Size 216.15 KB
Description Silicon NPN Power Transistors
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High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Bas

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