2SC2314
DESCRIPTION
- Collector-Emitter Voltage-
:VCER= 75V(Min) ;RBE=150Ω
- Collector Current-
:IC=1.5A
- Low Saturation Voltage
: VCE(sat)=0.6V(MAX)@ IC=0.5A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power Amplifier Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCER
Collector-Emitter Voltage RBE=150Ω
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @ Ta=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2314 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
