2SB944 - Silicon PNP Power Transistor

Inchange Semiconductor

Description

Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@ IC= -3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V (Min) Good Linearity of hFE Complement to Type 2SD1269 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

📥 Download Datasheet

2SB944 silicon pnp power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB944
Manufacturer	Inchange Semiconductor
File Size	218.21 KB
Description	Silicon PNP Power Transistor
Datasheet	2SB944 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SB944	SILICON POWER TRANSISTOR	SavantIC
2SB944	Power Transistors	Panasonic Semiconductor
2SB940	PNP Transistor	Panasonic Semiconductor
2SB940	Silicon PNP transistor	BLUE ROCKET ELECTRONICS
2SB940	SILICON POWER TRANSISTOR	SavantIC

Other Datasheets by Inchange Semiconductor

Part Number	Description
2SB940	Silicon PNP Power Transistor
2SB940A	Silicon PNP Power Transistor
2SB941	Silicon PNP Power Transistor
2SB941A	Silicon PNP Power Transistor
2SB942	Silicon PNP Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon PNP Power Transistor 2SB944 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V (Min) ·Good Linearity of hFE ·Complement to Type 2SD1269 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification.

Published: Oct 25, 2013 |