2SA663 - POWER TRANSISTOR

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= -2.3V(Max.)@ IC= -5A Complement to Type 2SC793 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power am

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2SA663 power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SA663
Manufacturer	Inchange Semiconductor
File Size	198.41 KB
Description	POWER TRANSISTOR
Datasheet	2SA663 Datasheet

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isc Silicon PNP Power Transistor 2SA663 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.3V(Max.)@ IC= -5A ·Complement to Type 2SC793 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 7 A 60 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.