Datasheet4U Logo Datasheet4U.com

2SA651 - Silicon PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio power amplifier applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA650 Silicon POwer Transistors SavantIC
2SA653 Silicon POwer Transistors SavantIC
2SA656 Silicon POwer Transistors SavantIC
2SA656A Silicon PNP Transistor Toshiba
2SA657 Silicon POwer Transistors SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SA650 PNP Transistor
2SA652 Silicon PNP Power Transistor
2SA653 POWER TRANSISTOR
2SA656 POWER TRANSISTOR
2SA657 POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor 2SA651 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.
Published: |