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2SA1988 - Power Transistor

General Description

High Voltage TO-3P package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SA1988 is PNP silicon power transistor that designed for audio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

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isc Silicon PNP Power Transistor DESCRIPTION ·High Voltage ·TO-3P package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SA1988 is PNP silicon power transistor that designed for audio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -7 A 20 W 100 150 ℃ -55~150 ℃ INCHANGE Semiconductor 2SA1988 isc website： www.iscsemi.