Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -80(V)(Min.)
Low Collector Saturation Voltage
:VCE(sat)= -0.3(V)(Max.)@IC= -5A
Large Current Capability-IC= -10A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for u
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1880
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -80(V)(Min.) ·Low Collector Saturation Voltage
:VCE(sat)= -0.3(V)(Max.)@IC= -5A ·Large Current Capability-IC= -10A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as a driver in DC/DC converters and
actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
-1.
2SA1880 Datasheet
