Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -80(V)(Min.)
Low Collector Saturation Voltage
:VCE(sat)= -0.3(V)(Max.)@IC= -3.5A
Large Current Capability-IC= -7A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -80(V)(Min.) ·Low Collector Saturation Voltage
:VCE(sat)= -0.3(V)(Max.)@IC= -3.5A ·Large Current Capability-IC= -7A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as a driver in DC/DC converters and
actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
-14
A
IB
Base Current-Continuous
-1.
2SA1879 Datasheet
