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2SA1679 - POWER TRANSISTOR

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40(V)(Min.) Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -2.5A Large Current Capability-IC= -5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for

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isc Silicon PNP Power Transistor 2SA1679 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -2.5A ·Large Current Capability-IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for mid-switching applications, and is ideal for use as a ramp driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current-Continuous -1.