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2SA1606 - Silicon PNP Power Transistor

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Part number 2SA1606
Manufacturer Inchange Semiconductor
File Size 213.58 KB
Description Silicon PNP Power Transistor
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Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) Large Current Capacity Complement to Type 2SC4159 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, AF power amplifier, 100W output predrivers.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6.0 V

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